English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 18 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 20 Ohms |
| 电流 - 反向泄漏@ vr: | 5 µA @ 13.7 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -65°C ~ 200°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N4750A R1GTSC (Taiwan Semiconductor) |
DIODE ZENER 27V 1W DO204AL |
|
FLZ7V5CRochester Electronics |
DIODE ZENER 7.5V 500MW SOD80 |
|
JANTXV1N3823AUR-1Roving Networks / Microchip Technology |
DIODE ZENER 3.9V 1W DO213AB |
|
1N5235B-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 500MW DO35 |
|
ZM4733A-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 1W DO213AB |
|
CZRB3010-GComchip Technology |
DIODE ZENER 10V 3W DO214AA |
|
MMBZ4617-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 2.4V 350MW SOT23-3 |
|
MMBZ5262C-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 225MW SOT23-3 |
|
1N4929ARoving Networks / Microchip Technology |
DIODE ZENER 19.2V 500MW DO35 |
|
DDZ16-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 16V 500MW SOD123 |
|
SZMM5Z13VT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 13.25V 500MW SOD523 |
|
JAN1N4477USRoving Networks / Microchip Technology |
DIODE ZENER 33V 1.5W D5A |
|
BZG05B47-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 47V 1.25W DO214AC |
