English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 51 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 400 mW |
| 阻抗（最大）（zzt）: | 180 Ohms |
| 电流 - 反向泄漏@ vr: | 50 nA @ 35.7 V |
| 电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
| 工作温度: | -65°C ~ 200°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AH, DO-35, Axial |
| 供应商设备包: | ALF2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZV55-B5V1,115Nexperia |
DIODE ZENER 5.1V 500MW LLDS |
|
1N4737AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 7.5V 1W DO204AL |
|
BZT52C22T-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 22V 300MW SOD523 |
|
ZMY56-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 1W DO213AB |
|
BZX84-A5V1,215Nexperia |
DIODE ZENER 5.1V 250MW TO236AB |
|
JANTX1N3040DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 68V 1W DO213AB |
|
TLZ4V7-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 500MW SOD80 |
|
JAN1N3826DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 1W DO213AB |
|
JAN1N3021BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 11V 1W DO213AB |
|
CZRT55C2V4-GComchip Technology |
DIODE ZENER 2.4V 350MW SOT23-3 |
|
NZX7V5C,133Nexperia |
DIODE ZENER 7.5V 500MW ALF2 |
|
BZX84C39-7-FZetex Semiconductors (Diodes Inc.) |
DIODE ZENER 39V 300MW SOT23-3 |
|
DDZ10DSF-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 10.19V 500MW SOD323F |
