类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
电压 - 齐纳 (nom) (vz): | 8.2 V |
宽容: | ±2% |
功率 - 最大值: | 100 mW |
阻抗(最大)(zzt): | 30 Ohms |
电流 - 反向泄漏@ vr: | 500 nA @ 5 V |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | -55°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | SOD-923 |
供应商设备包: | VMN2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZX384C3V0-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3V 200MW SOD323 |
|
1N5999CRoving Networks / Microchip Technology |
DIODE ZENER 9.1V 500MW DO35 |
|
MM3Z10VT1Rochester Electronics |
DIODE ZENER 10V 200MW SOD323 |
|
JANTX1N4104UR-1Roving Networks / Microchip Technology |
DIODE ZENER 10V 500MW DO213AA |
|
PD3Z284C13-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 13V 500MW POWERDI323 |
|
1N3332ARoving Networks / Microchip Technology |
DIODE ZENER 51V 50W DO5 |
|
SZMM5Z6V2ST1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 6.2V 500MW SOD523 |
|
TZM5228B-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 500MW SOD80 |
|
BZD27B24P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 800MW DO219AB |
|
CZRFR52C2V2-HFComchip Technology |
DIODE ZENER 2.2V 200MW 1005 |
|
SZMMBZ5262BLT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 51V 225MW SOT23-3 |
|
JANTX1N964D-1Roving Networks / Microchip Technology |
DIODE ZENER 13V 500MW DO35 |
|
JAN1N4111CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 17V DO213AA |