类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Box (TB) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 100 V |
宽容: | ±2% |
功率 - 最大值: | 1.3 W |
阻抗(最大)(zzt): | 350 Ohms |
电流 - 反向泄漏@ vr: | 500 nA @ 75 V |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
BZD27C82P-M-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 82V 800MW DO219AB |
![]() |
BZV55C3V3-TPMicro Commercial Components (MCC) |
DIODE ZENER 3.3V 500MW MINI MELF |
![]() |
HZU7.5B2TRF-ERochester Electronics |
DIODE ZENER |
![]() |
BZV90-C13,115Nexperia |
DIODE ZENER 13V 1.5W SOT223 |
![]() |
UDZVFHTE-176.8BROHM Semiconductor |
DIODE ZENER 6.79V 200MW UMD2 |
![]() |
MMSZ5245C-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 500MW SOD123 |
![]() |
BZD27C3V9P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 800MW DO219AB |
![]() |
HZS6A3TD-ERochester Electronics |
DIODE ZENER 0.4W |
![]() |
BZD27C3V6P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.6V 800MW DO219AB |
![]() |
CZRF52C9V1Comchip Technology |
DIODE ZENER 9.1V 200MW 1005 |
![]() |
UFZVFHTE-1722BROHM Semiconductor |
DIODE ZENER 22V 500MW UMD2 |
![]() |
JANTX1N4460CRoving Networks / Microchip Technology |
DIODE ZENER 6.2V 1.5W DO41 |
![]() |
PDZ36BZNexperia |
DIODE ZENER 35.97V 400MW SOD323 |