类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 8.2 V |
宽容: | ±5% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 4.5 Ohms |
电流 - 反向泄漏@ vr: | 10 µA @ 6 V |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | -65°C ~ 200°C |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GDZ20B-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 200MW SOD323 |
|
JAN1N5519B-1Roving Networks / Microchip Technology |
DIODE ZENER 3.6V 500MW DO35 |
|
TFZGTR30BROHM Semiconductor |
DIODE ZENER 30V 500MW TUMD2 |
|
ZPY47Diotec Semiconductor |
DIODE ZENER 47V 1.3W DO41 |
|
1N4737P/TR8Roving Networks / Microchip Technology |
DIODE ZENER 7.5V 1W DO204AL |
|
BZD27C36P-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 800MW DO219AB |
|
1N3344RBRoving Networks / Microchip Technology |
DIODE ZENER 130V 50W DO5 |
|
BZX584C20-V-G-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 200MW SOD523 |
|
SMBJ5942C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 51V 2W SMBJ |
|
SMBJ5914A/TR13Roving Networks / Microchip Technology |
DIODE ZENER 3.6V 2W SMBJ |
|
BZX79-B6V2,133Nexperia |
DIODE ZENER 6.2V 400MW ALF2 |
|
JANTX1N5542D-1Roving Networks / Microchip Technology |
DIODE ZENER 24V 500MW DO35 |
|
MMSZ5236B-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 500MW SOD123 |