类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 24 V |
宽容: | ±10% |
功率 - 最大值: | 50 W |
阻抗(最大)(zzt): | 2.6 Ohms |
电流 - 反向泄漏@ vr: | 10 µA @ 18.2 V |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 10 A |
工作温度: | -65°C ~ 175°C |
安装类型: | Chassis, Stud Mount |
包/箱: | DO-203AB, DO-5, Stud |
供应商设备包: | DO-5 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JANTX1N3029BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 24V 1W DO213AB |
|
CDLL978BRoving Networks / Microchip Technology |
DIODE ZENER 51V 500MW DO213AB |
|
1N4751A A0GTSC (Taiwan Semiconductor) |
DIODE ZENER 30V 1W DO204AL |
|
BZD27C110P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 110V 800MW DO219AB |
|
BZD27B82P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 82V 800MW DO219AB |
|
JAN1N966DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 16V 500MW DO213AA |
|
BZD27C220PHR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 220.5V 1W SUB SMA |
|
BZX55C33-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 500MW DO35 |
|
1N4756AP-TPMicro Commercial Components (MCC) |
DIODE ZENER 47V 1W DO-41 |
|
SMZG3793B-E3/52Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 1.5W DO215AA |
|
1N6029ARoving Networks / Microchip Technology |
DIODE ZENER 160V 500MW DO35 |
|
JAN1N967D-1Roving Networks / Microchip Technology |
DIODE ZENER 18V 500MW DO35 |
|
BZX84B16VLFHT116ROHM Semiconductor |
DIODE ZENER 16V 250MW SSD3 |