English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 43 V |
| 宽容: | ±10% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 70 Ohms |
| 电流 - 反向泄漏@ vr: | 5 µA @ 32.7 V |
| 电压 - 正向 (vf) (max) @ if: | - |
| 工作温度: | -65°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-213AB, MELF |
| 供应商设备包: | MELF DO-213AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TFZGTR20BROHM Semiconductor |
DIODE ZENER 20V 500MW TUMD2 |
|
1N3031BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 30V 1W DO213AB |
|
CDLL5268ARoving Networks / Microchip Technology |
DIODE ZENER 82V 10MW DO213AB |
|
JANTX1N4103D-1Roving Networks / Microchip Technology |
DIODE ZENER 9.1V 500MW DO35 |
|
1N4748CP/TR12Roving Networks / Microchip Technology |
DIODE ZENER 22V 1W DO204AL |
|
CZRB5345B-HFComchip Technology |
DIODE ZENER 8.7V 5W DO214AA |
|
CZRQR52C36-HFComchip Technology |
DIODE ZENER 36V 125MW 0402 |
|
1N957BRoving Networks / Microchip Technology |
DIODE ZENER 6.8V 500MW DO7 |
|
TZX8V2B-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 500MW DO35 |
|
BZX384C5V6-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 200MW SOD323 |
|
ZMY33-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 1W DO213AB |
|
BZT52B22-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 410MW SOD123 |
|
MM3Z3V9CRochester Electronics |
DIODE ZENER 3.9V 0.2W 5% UNI |
