English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 43 V |
| 宽容: | ±10% |
| 功率 - 最大值: | 2 W |
| 阻抗（最大）（zzt）: | 35 Ohms |
| 电流 - 反向泄漏@ vr: | 500 nA @ 32.7 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -65°C ~ 150°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JANTX1N4127-1Roving Networks / Microchip Technology |
DIODE ZENER 56V 500MW DO35 |
|
BZD27C10P MQGTSC (Taiwan Semiconductor) |
DIODE ZENER 10V 1W SUB SMA |
|
SMPZ3924B-E3/85AVishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 500MW DO220AA |
|
JANS1N6314USRoving Networks / Microchip Technology |
DIODE ZENER 3.9V 5W MELF |
|
JANS1N6329USRoving Networks / Microchip Technology |
DIODE ZENER 16V 500MW MELF |
|
VLZ11B-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 10.78V 500MW SOD80 |
|
BZV55C 24BSARectron USA |
DIODE ZENER 24V 500MW LL-34 |
|
MAZ8068GMLPanasonic |
DIODE ZENER 6.8V 150MW SMINI2 |
|
BZV55C 6.2BSARectron USA |
DIODE ZENER 6.2V 500MW LL-34 |
|
BZX84B33Rectron USA |
DIODE ZENER 33V 350MW SOT-23 |
|
BZG05C3V3TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 3.3V 1.25W DO214AC |
|
BZD17C62P MTGTSC (Taiwan Semiconductor) |
DIODE ZENER 62V 800MW SUB SMA |
|
BZW03D16-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 1.85W SOD64 |
