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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 晶体管型: | 2 NPN - Pre-Biased (Dual) |
| 电流 - 集电极 (ic) (max): | 100mA |
| 电压 - 集电极发射极击穿（最大值）: | 50V |
| 电阻器 - 基极 (r1): | 2.2kOhms |
| 电阻器 - 发射极基极 (r2): | 2.2kOhms |
| 直流电流增益 (hfe) (min) @ ic, vce: | 8 @ 5mA, 10V |
| vce 饱和度（最大值）@ ib, ic: | 250mV @ 5mA, 10mA |
| 电流 - 集电极截止（最大值）: | 500nA |
| 频率转换: | - |
| 功率 - 最大值: | 500mW |
| 安装类型: | Surface Mount |
| 包/箱: | SOT-563, SOT-666 |
| 供应商设备包: | SOT-563 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PUMB11,115Nexperia |
TRANS 2PNP PREBIAS 0.3W 6TSSOP |
|
UMD3NFHATRROHM Semiconductor |
PNP+NPN DIGITAL TRANSISTOR (WITH |
|
NSVMUN5133DW1T1GSanyo Semiconductor/ON Semiconductor |
TRANS 2PNP BRT BIPO SOT363-6 |
|
PIMD3,115Nexperia |
TRANS PREBIAS NPN/PNP 50V 6TSOP |
|
NSVBA114EDXV6T1GSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS 2PNP 50V SOT563-6 |
|
UP0421400LPanasonic |
TRANS PREBIAS DUAL NPN SSMINI6 |
|
RN2708,LFToshiba Electronic Devices and Storage Corporation |
PNPX2 BRT Q1BSR10KOHM Q1BER47KOH |
|
PEMD3,315Nexperia |
TRANS PREBIAS NPN/PNP 50V SOT666 |
|
RN1701,LFToshiba Electronic Devices and Storage Corporation |
NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K |
|
RN1910FE,LF(CTToshiba Electronic Devices and Storage Corporation |
TRANS 2NPN PREBIAS 0.1W ES6 |
|
DCX114TH-7Zetex Semiconductors (Diodes Inc.) |
TRANS PREBIAS NPN/PNP SOT563 |
|
PEMB30,115Nexperia |
TRANS PREBIAS 2PNP 50V SOT666 |
|
PUMB10,115Nexperia |
TRANS PREBIAS 2PNP 50V 6TSSOP |
