类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
晶体管型: | 1 PNP Pre-Biased, 1 PNP |
电流 - 集电极 (ic) (max): | 100mA, 1.8A |
电压 - 集电极发射极击穿(最大值): | 50V, 20V |
电阻器 - 基极 (r1): | 10kOhms |
电阻器 - 发射极基极 (r2): | 10kOhms |
直流电流增益 (hfe) (min) @ ic, vce: | 30 @ 5mA, 5V / 200 @ 1A, 2V |
vce 饱和度(最大值)@ ib, ic: | 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A |
电流 - 集电极截止(最大值): | 1µA, 100nA |
频率转换: | 130MHz |
功率 - 最大值: | 760mW |
安装类型: | Surface Mount |
包/箱: | SC-74, SOT-457 |
供应商设备包: | 6-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DCX114EU-13R-FZetex Semiconductors (Diodes Inc.) |
TRANS NPN/PNP PREBIAS SOT363 |
|
PUMD2,125Nexperia |
TRANS PREBIAS NPN/PNP 6TSSOP |
|
BCR185SH6327XTSA1IR (Infineon Technologies) |
TRANS 2PNP PREBIAS 0.25W SOT363 |
|
NSBA113EDXV6T1GSanyo Semiconductor/ON Semiconductor |
TRANS 2PNP PREBIAS 0.25W SOT563 |
|
RN1702,LFToshiba Electronic Devices and Storage Corporation |
NPNX2 BRT Q1BSR10KOHM Q1BER10KOH |
|
NSBA114EDXV6T1GSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS 2PNP 50V SOT563 |
|
BCR198SH6327XTSA1IR (Infineon Technologies) |
TRANS 2PNP PREBIAS 0.25W SOT363 |
|
FMA2AT148ROHM Semiconductor |
TRANS PREBIAS DUAL PNP SMT5 |
|
ACX124EUQ-13RZetex Semiconductors (Diodes Inc.) |
PREBIAS TRANSISTOR SOT363 |
|
RN4609(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
TRANS NPN/PNP PREBIAS 0.3W SM6 |
|
RN4986FE,LF(CTToshiba Electronic Devices and Storage Corporation |
TRANS NPN/PNP PREBIAS 0.1W ES6 |
|
IMB10AT110ROHM Semiconductor |
TRANS PREBIAS DUAL PNP SMT6 |
|
MUN5131DW1T1GSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS 2PNP 50V SC88 |