BIPOLAR DIGITAL TRANSISTOR
IC CHIP
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Last Time Buy |
晶体管型: | NPN - Pre-Biased |
电流 - 集电极 (ic) (max): | 100 mA |
电压 - 集电极发射极击穿(最大值): | 50 V |
电阻器 - 基极 (r1): | 22 kOhms |
电阻器 - 发射极基极 (r2): | 22 kOhms |
直流电流增益 (hfe) (min) @ ic, vce: | 50 @ 5mA, 5V |
vce 饱和度(最大值)@ ib, ic: | 300mV @ 500µA, 10mA |
电流 - 集电极截止(最大值): | 100nA (ICBO) |
频率转换: | 130 MHz |
功率 - 最大值: | 250 mW |
安装类型: | Surface Mount |
包/箱: | SC-70, SOT-323 |
供应商设备包: | PG-SOT323-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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