类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Obsolete |
晶体管型: | PNP - Pre-Biased |
电流 - 集电极 (ic) (max): | 100 mA |
电压 - 集电极发射极击穿(最大值): | 50 V |
电阻器 - 基极 (r1): | 4.7 kOhms |
电阻器 - 发射极基极 (r2): | - |
直流电流增益 (hfe) (min) @ ic, vce: | 200 @ 1mA, 5V |
vce 饱和度(最大值)@ ib, ic: | 150mV @ 250µA, 5mA |
电流 - 集电极截止(最大值): | 1µA |
频率转换: | - |
功率 - 最大值: | 500 mW |
安装类型: | Through Hole |
包/箱: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
供应商设备包: | TO-92-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
UNR51A1G0LPanasonic |
TRANS PREBIAS PNP 150MW SMINI3 |
|
FJX3006RTFSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS NPN 200MW SOT323 |
|
BCR 148T E6327IR (Infineon Technologies) |
TRANS PREBIAS NPN 250MW SC75 |
|
RN2110CT(TPL3)Toshiba Electronic Devices and Storage Corporation |
TRANS PREBIAS PNP 20V 0.05A CST3 |
|
MMUN2230LT1Sanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS NPN 246MW SOT23-3 |
|
DRA5143Z0LPanasonic |
TRANS PREBIAS PNP 150MW SMINI3 |
|
RN1441ATE85LFToshiba Electronic Devices and Storage Corporation |
TRANS PREBIAS NPN 20V 0.3A SMINI |
|
FJNS4206RBUSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92S |
|
UNR422200APanasonic |
TRANS PREBIAS NPN 300MW NS-B1 |
|
RN2105CT(TPL3)Toshiba Electronic Devices and Storage Corporation |
TRANS PREBIAS PNP 20V 0.05A CST3 |
|
BCR 198T E6327IR (Infineon Technologies) |
TRANS PREBIAS PNP 250MW SC75 |
|
RN2111CT(TPL3)Toshiba Electronic Devices and Storage Corporation |
TRANS PREBIAS PNP 20V 0.05A CST3 |
|
UNR91A2G0LPanasonic |
TRANS PREBIAS PNP 125MW SSMINI3 |