English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 晶体管型: | NPN - Pre-Biased |
| 电流 - 集电极 (ic) (max): | 100 mA |
| 电压 - 集电极发射极击穿（最大值）: | 50 V |
| 电阻器 - 基极 (r1): | 22 kOhms |
| 电阻器 - 发射极基极 (r2): | 22 kOhms |
| 直流电流增益 (hfe) (min) @ ic, vce: | 56 @ 5mA, 5V |
| vce 饱和度（最大值）@ ib, ic: | 300mV @ 500µA, 10mA |
| 电流 - 集电极截止（最大值）: | 100nA (ICBO) |
| 频率转换: | 250 MHz |
| 功率 - 最大值: | 300 mW |
| 安装类型: | Through Hole |
| 包/箱: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| 供应商设备包: | TO-92-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RN1102ACT(TPL3)Toshiba Electronic Devices and Storage Corporation |
TRANS PREBIAS NPN 50V 0.08A CST3 |
|
DTC323TUT106ROHM Semiconductor |
TRANS PREBIAS NPN 200MW UMT3 |
|
BCR 149T E6327IR (Infineon Technologies) |
TRANS PREBIAS NPN 250MW SC75 |
|
DDTD142JC-7Zetex Semiconductors (Diodes Inc.) |
TRANS PREBIAS NPN 200MW SOT23-3 |
|
DDTC123YCA-7Zetex Semiconductors (Diodes Inc.) |
TRANS PREBIAS NPN 200MW SOT23-3 |
|
RN2104MFV,L3FToshiba Electronic Devices and Storage Corporation |
TRANS PREBIAS PNP 50V 0.1A VESM |
|
DDTC114TUA-7Zetex Semiconductors (Diodes Inc.) |
TRANS PREBIAS NPN 200MW SOT323 |
|
FJV3112RMTFSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS NPN 200MW SOT23-3 |
|
UNR511D00LPanasonic |
TRANS PREBIAS PNP 150MW SMINI3 |
|
DDTA144WKA-7-FZetex Semiconductors (Diodes Inc.) |
TRANS PREBIAS PNP 200MW SC59-3 |
|
DRC2114E0LPanasonic |
TRANS PREBIAS NPN 200MW MINI3 |
|
UNR91A4G0LPanasonic |
TRANS PREBIAS PNP 125MW SSMINI3 |
|
RN2313(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
TRANS PREBIAS PNP 50V 0.1A USM |
