类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Obsolete |
晶体管型: | PNP - Pre-Biased |
电流 - 集电极 (ic) (max): | 100 mA |
电压 - 集电极发射极击穿(最大值): | 50 V |
电阻器 - 基极 (r1): | 2.2 kOhms |
电阻器 - 发射极基极 (r2): | 2.2 kOhms |
直流电流增益 (hfe) (min) @ ic, vce: | 30 @ 20mA, 5V |
vce 饱和度(最大值)@ ib, ic: | 150mV @ 500µA, 10mA |
电流 - 集电极截止(最大值): | 1µA |
频率转换: | - |
功率 - 最大值: | 500 mW |
安装类型: | Through Hole |
包/箱: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
供应商设备包: | TO-92-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DDTC114GCA-7Zetex Semiconductors (Diodes Inc.) |
TRANS PREBIAS NPN 200MW SOT23-3 |
|
BCR 148F B6327IR (Infineon Technologies) |
TRANS PREBIAS NPN 250MW TSFP-3 |
|
RN1112CT(TPL3)Toshiba Electronic Devices and Storage Corporation |
TRANS PREBIAS NPN 20V 0.05A CST3 |
|
BCR 149F E6327IR (Infineon Technologies) |
TRANS PREBIAS NPN 250MW TSFP-3 |
|
UNR5217G0LPanasonic |
TRANS PREBIAS NPN 150MW SMINI3 |
|
UNR51A5G0LPanasonic |
TRANS PREBIAS PNP 150MW SMINI3 |
|
BCR198E6393HTSA1IR (Infineon Technologies) |
TRANS PREBIAS PNP SOT23 |
|
RN2404TE85LFToshiba Electronic Devices and Storage Corporation |
TRANS PREBIAS PNP 50V 0.1A SMINI |
|
UNR911HG0LPanasonic |
TRANS PREBIAS PNP 125MW SSMINI3 |
|
DDTA114EUA-7Zetex Semiconductors (Diodes Inc.) |
TRANS PREBIAS PNP 200MW SOT323 |
|
DTA144ESATPROHM Semiconductor |
TRANS PREBIAS PNP 300MW SPT |
|
RN2104CT(TPL3)Toshiba Electronic Devices and Storage Corporation |
TRANS PREBIAS PNP 20V 0.05A CST3 |
|
PDTC114TEF,115NXP Semiconductors |
TRANS PREBIAS NPN 150MW SC89 |