POWER BIPOLAR TRANSISTOR, 5A, 10
IC GATE DRVR LOW-SIDE 8MSOP
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
晶体管型: | NPN - Darlington |
电流 - 集电极 (ic) (max): | 5 A |
电压 - 集电极发射极击穿(最大值): | 100 V |
vce 饱和度(最大值)@ ib, ic: | 4V @ 20mA, 5A |
电流 - 集电极截止(最大值): | 500µA |
直流电流增益 (hfe) (min) @ ic, vce: | 1000 @ 3A, 3V |
功率 - 最大值: | 2 W |
频率转换: | - |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-220-3 |
供应商设备包: | TO-220AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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