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SMALL SIGNAL BIPOLAR TRANSISTOR
MOSFET N-CH 100V 700MA SOT23
IDC CBL - HHSR10S/AE10M/X
INSULATION DISPLACEMENT TERMINAL
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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 晶体管型: | - |
| 电流 - 集电极 (ic) (max): | - |
| 电压 - 集电极发射极击穿（最大值）: | - |
| vce 饱和度（最大值）@ ib, ic: | - |
| 电流 - 集电极截止（最大值）: | - |
| 直流电流增益 (hfe) (min) @ ic, vce: | - |
| 功率 - 最大值: | - |
| 频率转换: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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0.1A, 50V, NPN |
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2N3773NTE Electronics, Inc. |
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SMALL SIGNAL BIPOLAR TRANSISTOR, |