类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
晶体管型: | PNP |
电流 - 集电极 (ic) (max): | 50 A |
电压 - 集电极发射极击穿(最大值): | 80 V |
vce 饱和度(最大值)@ ib, ic: | 5V @ 10A, 50A |
电流 - 集电极截止(最大值): | 1mA |
直流电流增益 (hfe) (min) @ ic, vce: | 15 @ 25A, 2V |
功率 - 最大值: | 300 W |
频率转换: | 2MHz |
工作温度: | -65°C ~ 200°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-204AA, TO-3 |
供应商设备包: | TO-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
KSC1009YTA-ONRochester Electronics |
0.7A, 140V, NPN, TO-92 |
|
2SB1234-TB-E-SYRochester Electronics |
PNP EPITAXIAL PLANAR SILICON |
|
BC68-25PAS115Rochester Electronics |
SMALL SIGNAL BIPOLAR TRANSISTOR |
|
BC846AE6327Rochester Electronics |
BIPOLAR GEN PURPOSE TRANSISTOR |
|
BCP5316H6433XTMA1IR (Infineon Technologies) |
TRANS PNP 80V 1A SOT223 |
|
MX0912B251YRochester Electronics |
RF POWER BIPOLAR TRANSISTOR, 1-E |
|
2SCR522MT2LROHM Semiconductor |
TRANS NPN 20V 0.2A VMT3 |
|
2SD1065RRochester Electronics |
POWER BIPOLAR TRANSISTOR NPN |
|
2N2907AUBRoving Networks / Microchip Technology |
TRANS PNP 60V 0.6A |
|
NTE245NTE Electronics, Inc. |
TRANS NPN 80V 10A TO3 |
|
NTE184NTE Electronics, Inc. |
TRANS NPN 80V 4A TO126 |
|
BC857BLP-7BZetex Semiconductors (Diodes Inc.) |
TRANS PNP 45V 0.1A DFN1006-3 |
|
2SC4105NRochester Electronics |
NPN SILICON TRANSISTOR |