HIGHER CURRENT, SINGLE NPN TRANS
GANFET N-CH 650V 20A 3PQFN
PHOTO DIODE
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
晶体管型: | NPN |
电流 - 集电极 (ic) (max): | 50 mA |
电压 - 集电极发射极击穿(最大值): | 45 V |
vce 饱和度(最大值)@ ib, ic: | 250mV @ 10mA, 100mA |
电流 - 集电极截止(最大值): | 200pA (ICBO) |
直流电流增益 (hfe) (min) @ ic, vce: | 150 @ 10µA, 5V |
功率 - 最大值: | - |
频率转换: | 600MHz |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-226-3, TO-92-3 (TO-226AA) |
供应商设备包: | TO-92 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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