English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 晶体管型: | PNP |
| 电流 - 集电极 (ic) (max): | 600 mA |
| 电压 - 集电极发射极击穿（最大值）: | 40 V |
| vce 饱和度（最大值）@ ib, ic: | 1.6V @ 50mA, 500mA |
| 电流 - 集电极截止（最大值）: | 20nA (ICBO) |
| 直流电流增益 (hfe) (min) @ ic, vce: | 40 @ 150mA, 10V |
| 功率 - 最大值: | 1.8 W |
| 频率转换: | 200MHz |
| 工作温度: | -65°C ~ 200°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-206AA, TO-18-3 Metal Can |
| 供应商设备包: | TO-18 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
D45H4Rochester Electronics |
PNP EPITAXIAL SILICON TRANSISTOR |
|
|
BLF888DS112Rochester Electronics |
UHF POWER LDMOS TRANSISTOR, SOT5 |
|
|
BFT28CRochester Electronics |
PNP HIGH-VOLTAGE RANSISTOR |
|
|
2SC4523S-ERochester Electronics |
NPN EPITAXIAL PLANAR SILICON |
|
|
BC857CQA147Rochester Electronics |
SMALL SIGNAL BIPOLAR TRANSISTOR |
|
|
2SB1119S-TD-ERochester Electronics |
BIP PNP 1A 25V |
|
|
BCR39PN-E6327Rochester Electronics |
TRANSISTOR DIGITAL BJT NPN/PNP |
|
|
BUW41Rochester Electronics |
NPN POWER TRANSISTOR |
|
|
FJPF19430TURochester Electronics |
POWER BIPOLAR TRANSISTOR |
|
|
BC846CLT1GSanyo Semiconductor/ON Semiconductor |
TRANS NPN 65V GP SOT23-3 |
|
|
2N2484Roving Networks / Microchip Technology |
TRANS NPN 60V 0.05A TO-18 |
|
|
BC 847C E6433Rochester Electronics |
BIPOLAR GEN PURPOSE TRANSISTOR |
|
|
JAN2N3999Roving Networks / Microchip Technology |
TRANS NPN 80V 10A TO59 |
