类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/498 |
包裹: | Bulk |
零件状态: | Active |
晶体管型: | NPN |
电流 - 集电极 (ic) (max): | 8 A |
电压 - 集电极发射极击穿(最大值): | 350 V |
vce 饱和度(最大值)@ ib, ic: | 5V @ 2.67A, 8A |
电流 - 集电极截止(最大值): | 50µA |
直流电流增益 (hfe) (min) @ ic, vce: | 12 @ 3A, 5V |
功率 - 最大值: | 125 W |
频率转换: | - |
工作温度: | -65°C ~ 200°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-204AA, TO-3 |
供应商设备包: | TO-204AA (TO-3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2SD1614-T1-AZRochester Electronics |
POWER BIPOLAR TRANSISTOR NPN |
|
2SD1286-Z-E1-AZRochester Electronics |
SMALL SIGNAL BIPOLAR TRANSTR NPN |
|
2SD1247S-AERochester Electronics |
NPN SILICON TRANSISTOR |
|
2SB1400-E#0205Rochester Electronics |
POWER BIPOLAR TRANSISTOR, PNP |
|
JANTXV2N6298Roving Networks / Microchip Technology |
TRANS PNP DARL 60V 8A TO66 |
|
2N3498LRoving Networks / Microchip Technology |
NPN POWER SILICON TRANSISTORS |
|
2N5091Microsemi |
NPN SILICON TRANSISTOR |
|
BCP5610QTCZetex Semiconductors (Diodes Inc.) |
PWR MID PERF TRANSISTOR SOT223 |
|
SPS9607RLRMRochester Electronics |
SS T092 GP XSTR PNP SPCL |
|
2N335T2Roving Networks / Microchip Technology |
NPN POWER SILICON TRANSISTORS |
|
2SAR375P5T100QROHM Semiconductor |
PNP -1.5A -120V MIDDLE POWER TRA |
|
RQA0008AQS#H1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SA2201-TD-ERochester Electronics |
PNP SILICON TRANSISTOR |