English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.2A |
| rds on (max) @ id, vgs: | 45mOhm @ 4.2A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA (Min) |
| 栅极电荷 (qg) (max) @ vgs: | 29.6nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 1022pF @ 15V |
| 功率 - 最大值: | 1.8W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSG0811NDATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 25V 19A/41A 8TISON |
|
NX3008CBKV,115Nexperia |
MOSFET N/P-CH 30V SOT666 |
|
SI7904BDN-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 20V 6A 1212-8 |
|
IPG20N10S436AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 100V 20A 8TDSON |
|
SI4618DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 8A 8-SOIC |
|
FDS6898AZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 9.4A 8SOIC |
|
SH8K3TB1ROHM Semiconductor |
MOSFET 2N-CH 30V 7A SOP8 |
|
FDS9958-F085Rochester Electronics |
DUAL P-CHANNEL POWER TRENCH MOSF |
|
TPC8223-H,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 9A 8SOP |
|
ALD310708PCLAdvanced Linear Devices, Inc. |
MOSFET 4 P-CH 8V 16DIP |
|
FDS6875Sanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 6A 8SOIC |
|
EPC2105EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
|
FW216A-TL-2WXRochester Electronics |
N CHANNEL POWER MOSFET |
