English
简体中文
GENERAL PURPOSE DUSTER NON FLAMM
MOSFET 4 P-CH 8V 16SOIC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | EPAD®, Zero Threshold™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | 4 P-Channel, Matched Pair |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 8V |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | 180mV @ 1µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 2.5pF @ 5V |
| 功率 - 最大值: | 500mW |
| 工作温度: | 0°C ~ 70°C |
| 安装类型: | Surface Mount |
| 包/箱: | 16-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AOTE32136CAlpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 8TSSOP |
|
DMN53D0LDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 50V 0.36A SOT363 |
|
SH8K22TB1ROHM Semiconductor |
MOSFET 2N-CH 45V 4.5A SOP8 |
|
SP000629364Rochester Electronics |
IPP60R950C6 - 600V N-CHANNEL |
|
MTM684110LBFPanasonic |
MOSFET 2P-CH 12V 4.8A WMINI8-F1 |
|
MSCSM120AM02CT6LIAGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6C LI |
|
DMP2200UDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 0.9A SOT363 |
|
SLA5085Sanken Electric Co., Ltd. |
MOSFET 5N-CH 60V 10A 12-SIP |
|
US6M11TRROHM Semiconductor |
MOSFET N/P-CH 20V/12V TUMT6 |
|
RFD3055SM9AS2479Rochester Electronics |
12A, 60V, 0.15OHM, N-CHANNEL, |
|
TSM8588CS RLGTSC (Taiwan Semiconductor) |
COMPLEMENTARY N & P-CHANNEL POWE |
|
QS6J1TRROHM Semiconductor |
MOSFET 2P-CH 20V 1.5A TSMT6 |
|
BSM180D12P3C007ROHM Semiconductor |
SIC POWER MODULE |