English
简体中文
MOSFET 2N-CH 60V 40A LFPAK
30V NCH+NCH POWER MOSFET - SP8K1
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A (Ta) |
| rds on (max) @ id, vgs: | 51mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 5.5nC @ 5V |
| 输入电容 (ciss) (max) @ vds: | 230pF @ 10V |
| 功率 - 最大值: | 1.4W (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIA907EDJT-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 4.5A SC-70-6L |
|
IRF7907TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 30V 9.1A/11A 8SO |
|
SSM6P39TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET P-CHX2 VDSS- |
|
FDG6332C-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V SC70-6 |
|
MTM78E2B0LBFPanasonic |
MOSFET 2N-CH 20V 4A WSMINI8-F1-B |
|
IRF7301TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 20V 5.2A 8-SOIC |
|
SIB900EDK-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 1.5A SC-75-6 |
|
SSM6L09FUTE85LFToshiba Electronic Devices and Storage Corporation |
MOSFET N/P-CH 30V 0.4A/0.2A US6 |
|
DMP2100UFU-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V U-DFN2030-6 |
|
EPC2104EPC |
GAN TRANS SYMMETRICAL HALF BRIDG |
|
NTJD4152PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 0.88A SOT-363 |
|
FDS4501HSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V/20V 8SOIC |
|
CMLDM7002AJ TR PBFREECentral Semiconductor |
MOSFET 2N-CH 60V 0.28A SOT563 |