English
简体中文
8A, 50V, 0.300 OHM, P-CHANNEL
LINE TRANSCEIVER
K4 DRIVE SYSTEM DEV KIT - VDC PA
POT 20K OHM CERM 2W +/-100 PPM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 场效应管特征: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI4599DY-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 40V 6.8A 8SOIC |
|
MSCSM120HM50CT3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP3F |
|
UPA2550T1H-T2-ATRochester Electronics |
POWER, 5A, 12V, P-CHANNEL MOSFET |
|
SI1026X-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 60V 0.305A SC89-6 |
|
PMCXB900UEZNexperia |
MOSFET N/P-CH 20V 600/500MA 6DFN |
|
FDMD8580Sanyo Semiconductor/ON Semiconductor |
MOSFET 80V 16A POWER 5X6 |
|
IPG20N06S2L35AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 55V 2A 8TDSON |
|
ZXMN2088DE6TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 1.7A SOT-26 |
|
EMH2411R-TL-HRochester Electronics |
POWER, N-CHANNEL, MOSFET |
|
DMN3401LDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V SOT363 |
|
FW274-TL-ERochester Electronics |
N-CHANNEL MOSFET |
|
FDS8949-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 6A 8SOIC |
|
FDPF035N06BRochester Electronics |
88A, 60V, 0.0035OHM, N CHANNEL , |