English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® Gen IV |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual), Schottky |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc) |
| rds on (max) @ id, vgs: | 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 49nC @ 10V, 165nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 1630pF @ 15V, 5550pF @ 15V |
| 功率 - 最大值: | 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerWDFN |
| 供应商设备包: | 8-PowerPair® (6x5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AO4862EAlpha and Omega Semiconductor, Inc. |
MOSFET 2 N-CH 30V 4.5A 8SOIC |
|
NTHD5905T1Rochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
SIA918EDJ-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V POWERPAK SC70-6 |
|
SI6926ADQ-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 20V 4.1A 8TSSOP |
|
NVMFD5C478NT1GSanyo Semiconductor/ON Semiconductor |
40V 17 MOHM T6 S08FL DUAL |
|
IPI50N12S3L15AKSA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
IRF7101PBFRochester Electronics |
HEXFET POWER MOSFET |
|
SIL2301-TPMicro Commercial Components (MCC) |
P-CHANNEL,MOSFETS,SOT23-6L PACKA |
|
IRFI4212H-117PIR (Infineon Technologies) |
MOSFET 2N-CH 100V 11A TO220-5 |
|
FG6943010RPanasonic |
MOSFET N/P-CH 30V 0.1A SSMINI6 |
|
ZXMN3A06DN8TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 4.9A 8-SOIC |
|
SMA5133Sanken Electric Co., Ltd. |
MOSFET 3N/3P-CH 500V 2.5A 12-SIP |
|
RFD3055LE_R4821Rochester Electronics |
TRANS MOSFET N-CH 60V 11A 3PIN(3 |
