类型 | 描述 |
---|---|
系列: | Z-Rec® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Half Bridge) |
场效应管特征: | Silicon Carbide (SiC) |
漏源电压 (vdss): | 1200V (1.2kV) |
电流 - 连续漏极 (id) @ 25°c: | 193A (Tc) |
rds on (max) @ id, vgs: | 16mOhm @ 120A, 20V |
vgs(th) (最大值) @ id: | 2.6V @ 6mA (Typ) |
栅极电荷 (qg) (max) @ vgs: | 378nC @ 20V |
输入电容 (ciss) (max) @ vds: | 6300pF @ 1000V |
功率 - 最大值: | 925W |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | Module |
供应商设备包: | Module |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVMFD5852NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 15A SO8FL |
|
IRF8910PBFRochester Electronics |
HEXFET POWER MOSFET |
|
APTC60BBM24T3GRoving Networks / Microchip Technology |
MOSFET 2N-CH 600V 95A SP3F |
|
IRF3546MTRPBFRochester Electronics |
DUAL PHASE POWIRBLOCK |
|
DMN5L06DMK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 50V 0.305A SOT-26 |
|
FDS8962CRochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDS3890Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 80V 4.7A 8-SO |
|
NVMD6N04R2GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 4.6A 8-SOIC |
|
UT6K30TCRROHM Semiconductor |
UT6K30 IS LOW ON - RESISTANCE AN |
|
BSS138DWQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2NCH 50V 200MA SOT363 |
|
BUK9K29-100E,115Nexperia |
MOSFET 2N-CH 100V 30A LFPAK56D |
|
FDS6812ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
STL66DN3LLH5STMicroelectronics |
MOSFET 2N-CH 30V 78.5A PWRFLAT56 |