类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 60V |
电流 - 连续漏极 (id) @ 25°c: | 5.3A (Ta), 19.5A (Tc) |
rds on (max) @ id, vgs: | 44mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 20nC @ 10V |
输入电容 (ciss) (max) @ vds: | 560pF @ 25V |
功率 - 最大值: | 2.9W (Ta), 38.5W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-PowerTDFN |
供应商设备包: | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPI80N04S3-03Rochester Electronics |
N-CHANNEL AUTOMOTIVE MOSFET |
|
SI6975DQ-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 12V 4.3A 8TSSOP |
|
DMG4822SSDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFETDUAL N-CHAN 30VSO-8 |
|
NTHD4401PT1Rochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
APTC60AM18SCGRoving Networks / Microchip Technology |
MOSFET 2N-CH 600V 143A SP6 |
|
FDMD8530Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 35A |
|
2N7002PS,125Nexperia |
MOSFET 2N-CH 60V 0.32A 6TSSOP |
|
UPA1793G-E1-ATRochester Electronics |
SMALL SIGNAL N AND P-CH MOSFET |
|
FX50SMJ-2#B00Rochester Electronics |
HIGH SPEED SWITCHING P CHANNEL , |
|
AO4832Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 10A 8SOIC |
|
SP8K52FRATBROHM Semiconductor |
4V DRIVE NCH+NCH MOSFET |
|
IPG20N06S415AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 60V 20A 8TDSON |
|
ALD110800ASCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16SOIC |