DIODE SCHOTTKY 40V 1A POWERDI123
MOSFET 6N-CH 800V 28A SP6P
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | 6 N-Channel (3-Phase Bridge) |
场效应管特征: | Standard |
漏源电压 (vdss): | 800V |
电流 - 连续漏极 (id) @ 25°c: | 28A |
rds on (max) @ id, vgs: | 150mOhm @ 14A, 10V |
vgs(th) (最大值) @ id: | 3.9V @ 2mA |
栅极电荷 (qg) (max) @ vgs: | 180nC @ 10V |
输入电容 (ciss) (max) @ vds: | 4507pF @ 25V |
功率 - 最大值: | 277W |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | SP6 |
供应商设备包: | SP6-P |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMN2028UFU-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 7.9A UDFN2020-6 |
|
SIA928DJ-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V POWERPAK SC70-6 |
|
FDR8508PRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
APTM100A13SGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1000V 65A SP6 |
|
AUIRF7303QTRRochester Electronics |
PFET, 4.9A I(D), 30V, 0.05OHM, 2 |
|
ALD1115PALAdvanced Linear Devices, Inc. |
MOSFET N/P-CH 10.6V 8DIP |
|
QS6J3TRROHM Semiconductor |
MOSFET 2P-CH 20V 1.5A TSMT6 |
|
DMNH6042SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 60V 16.7A 8SO |
|
SSM6N56FE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 20V 0.8A |
|
BSS84AKS,115Nexperia |
MOSFET 2P-CH 50V 0.16A 6TSSOP |
|
CSD87350Q5DTexas Instruments |
MOSFET 2N-CH 30V 40A 8LSON |
|
ALD212908ASALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC |
|
DMTH6016LSDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CHANNEL 60V 7.6A 8SO |