English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 场效应管特征: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CSD88599Q5DCTTexas Instruments |
MOSFET 2N-CH 60V 22-VSON-CLIP |
|
STS8C5H30LSTMicroelectronics |
MOSFET N/P-CH 30V 8A/5.4A 8SOIC |
|
ULN2003F12FN-7Zetex Semiconductors (Diodes Inc.) |
IC PWR RELAY N-CHAN U-DFN3030-10 |
|
FDC6302PSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 25V 120MA SSOT6 |
|
DMC3025LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 30V 6.5A/4.2A 8SO |
|
FDML7610SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 12A/17A 8MLP |
|
SP8M10TBROHM Semiconductor |
MOSFET N/P-CH 30V 7A/4.5A 8SOIC |
|
UC2705D/81278Rochester Electronics |
BUFFER/INVERTER BASED MOSFET DRI |
|
PMDT290UCE,115Nexperia |
MOSFET N/P-CH 20V SOT666 |
|
SQ1922AEEH-T1_GE3Vishay / Siliconix |
MOSFET N-CH DUAL 20V .85A SOT-36 |
|
RM10N40S8Rectron USA |
MOSFET 2 N-CHANNEL 40V 10A 8SOP |
|
DMG6301UDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 25V 0.24A SOT363 |
|
SSM6N62TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET N-CH X 2 VDS |
