类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 60V |
电流 - 连续漏极 (id) @ 25°c: | 170mA (Ta) |
rds on (max) @ id, vgs: | 4.5Ohm @ 170mA, 10V |
vgs(th) (最大值) @ id: | 1.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 1.4nC @ 10V |
输入电容 (ciss) (max) @ vds: | 20pF @ 30V |
功率 - 最大值: | 325mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 6-TSSOP, SC-88, SOT-363 |
供应商设备包: | 6-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPG20N04S4L07ATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 40V 20A 8TDSON |
|
FDU6670ASRochester Electronics |
TRANS MOSFET N-CH 30V 3PIN(3+TAB |
|
AOSD32334CAlpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 8-SOIC |
|
UPA2451BTL-E1-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
ALD114904PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
SSM6P36FE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET 2P-CH 20V 0.33A ES6 |
|
ALD310700APCLAdvanced Linear Devices, Inc. |
MOSFET 4 P-CH 8V 16DIP |
|
ALD210800APCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
|
BUK9K134-100EXNexperia |
MOSFET 2N-CH 100V 8.5A LFPAK56D |
|
SI4804CDY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 8A 8SOIC |
|
STL20DN10F7STMicroelectronics |
MOSFET 2N-CH 100V 20A PWRFLAT56 |
|
DMN4031SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 40V 5.2A 8SO |
|
SQJQ904E-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 40V POWERPAK8X8 |