类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 60V |
电流 - 连续漏极 (id) @ 25°c: | 210mA (Ta) |
rds on (max) @ id, vgs: | 3.5Ohm @ 200mA, 10V |
vgs(th) (最大值) @ id: | 1.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 0.7nC @ 10V |
输入电容 (ciss) (max) @ vds: | 20pF @ 30V |
功率 - 最大值: | 320mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 6-TSSOP, SC-88, SOT-363 |
供应商设备包: | 6-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FS30KMJ-3#B00Rochester Electronics |
N-CHANNEL , 150V, 30A |
|
SQJB70EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 100V POWERPAK SO8 |
|
BSO211PHRochester Electronics |
3.2A, 20V, 0.067OHM, 2-ELEMENT, |
|
AON6926Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 11A/12A 8DFN |
|
AO4805Alpha and Omega Semiconductor, Inc. |
MOSFET 2P-CH 30V 9A 8-SOIC |
|
CSD87352Q5DTexas Instruments |
MOSFET 2N-CH 30V 25A 8SON |
|
ALD110908PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
CSD86350Q5DTTexas Instruments |
25V POWERBLOCK N CH MOSFET |
|
EPC2100ENGRTEPC |
GANFET 2 N-CH 30V 9.5A/38A DIE |
|
EM6K33T2RROHM Semiconductor |
MOSFET 2N-CH 50V 0.2A EMT6 |
|
BUK9K6R8-40EXNexperia |
MOSFET 2N-CH 40V 40A 56LFPAK |
|
ALD110900SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
SLA5073Sanken Electric Co., Ltd. |
MOSFET 6N-CH 60V 5A 15-SIP |