English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) Common Drain |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | 17mOhm @ 6A, 4.5V |
| vgs(th) (最大值) @ id: | 1.1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 13nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 1100pF @ 10V |
| 功率 - 最大值: | 2.5W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SMD, Flat Lead |
| 供应商设备包: | 8-DFN (2.9x2.3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
UM6K34NTCNROHM Semiconductor |
MOSFET 2N-CH 50V 0.2A UMT6 |
|
ZXMHC3A01N8TCZetex Semiconductors (Diodes Inc.) |
MOSFET 2N/2P-CH 30V 8-SOIC |
|
HP8MA2TB1ROHM Semiconductor |
HP8MA2 IS LOW ON-RESISTANCE AND |
|
FDS3601Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
APTC60DDAM35T3GRoving Networks / Microchip Technology |
MOSFET 2N-CH 600V 72A SP3 |
|
PMDPB28UN,115Rochester Electronics |
NOW NEXPERIA PMDPB28UN - HUSON6 |
|
ALD1102SALAdvanced Linear Devices, Inc. |
MOSFET 2P-CH 10.6V 8SOIC |
|
SIA938DJT-T1-GE3Vishay / Siliconix |
DUAL N-CHANNEL 20-V (D-S) MOSFET |
|
SQJ992EP-T1_GE3Vishay / Siliconix |
MOSFET 2N-CH 60V 15A POWERPAKSO8 |
|
NVMFD5853NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 12A 8DFN |
|
SQ4920EY-T1_GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 8A 8SO |
|
DMP2110UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 T&R |
|
BUK7K23-80EXNexperia |
MOSFET 2 N-CH 80V 17A LFPAK56D |
