类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 40V |
电流 - 连续漏极 (id) @ 25°c: | 10.6A (Ta), 43.6A (Tc) |
rds on (max) @ id, vgs: | 15mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 10.2nC @ 10V |
输入电容 (ciss) (max) @ vds: | 733pF @ 20V |
功率 - 最大值: | 2.41W (Ta), 42.8W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-PowerTDFN |
供应商设备包: | PowerDI5060-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AOD661Alpha and Omega Semiconductor, Inc. |
MOSFET 2 N-CH 30V 12A TO252-4L |
|
BUK7K134-100EXNexperia |
MOSFET 2N-CH 100V 9.8A LFPAK56D |
|
MCCD2007-TPMicro Commercial Components (MCC) |
MOSFET 2N-CH 20V 7A |
|
NTLLD4951NFTWGSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN |
|
FDD3510HSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 80V 4.3/2.8A TO252 |
|
BSL207NL6327Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
FDD10AN06A0QRochester Electronics |
1-ELEMENT, N-CHANNEL |
|
DMN2004VK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 0.54A SOT-563 |
|
NTLTD7900ZR2GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
PMDT290UNE,115Nexperia |
MOSFET 2N-CH 20V 0.8A SOT666 |
|
DMN6070SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 3.3A 8-SO |
|
SI6913DQ-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 12V 4.9A 8TSSOP |
|
DMC2710UV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V SOT563 |