English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.5A (Ta) |
| rds on (max) @ id, vgs: | 65mOhm @ 4.5A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 10nC @ 5V |
| 输入电容 (ciss) (max) @ vds: | 500pF @ 10V |
| 功率 - 最大值: | 2W |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PMDPB70XP,115Rochester Electronics |
NOW NEXPERIA PMDPB70XP - SMALL S |
|
ALD212900PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
|
FW907-TL-ERochester Electronics |
TRANSISTOR |
|
NDS9948Sanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 60V 2.3A 8-SOIC |
|
ALD1102PALAdvanced Linear Devices, Inc. |
MOSFET 2P-CH 10.6V 8DIP |
|
EFC4618R-P-TRRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
TC7920K6-GRoving Networks / Microchip Technology |
MOSFET 2N/2P-CH 200V 12VDFN |
|
SQ4949EY-T1_GE3Vishay / Siliconix |
MOSFET 2 P-CH 30V 7.5A 8SOIC |
|
BSC112N06LDATMA1IR (Infineon Technologies) |
TRENCH 40<-<100V |
|
MMDF2C03HDR2GRochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDMB3900ANSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 7A 8MLP MICRO |
|
DMC2450UV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V SOT563 |
|
FW297-TL-2WSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 4.5A 8SOIC |
