类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 100V |
电流 - 连续漏极 (id) @ 25°c: | 54.7A (Tc) |
rds on (max) @ id, vgs: | 17.4mOhm @ 17A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 28.6nC @ 10V |
输入电容 (ciss) (max) @ vds: | 1986pF @ 50V |
功率 - 最大值: | 2.2W (Ta), 78W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-PowerTDFN |
供应商设备包: | PowerDI5060-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MMBT7002DWDiotec Semiconductor |
MOSFET SOT-363 60V 0.115A |
|
HP8K24TBROHM Semiconductor |
HP8K24 IS THE HIGH RELIABILITY T |
|
FDMC7208SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 12A/16A PWR33 |
|
NTHD4508NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 3A CHIPFET |
|
FF2MR12KM1PHOSA1IR (Infineon Technologies) |
MEDIUM POWER 62MM |
|
NVMFD5877NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 6A 8SOIC |
|
ZXMN3A04DN8TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 6.5A 8-SOIC |
|
CWDM305ND TR13 PBFREECentral Semiconductor |
MOSFET 2N-CH 30V 5.8A 8SOIC |
|
NVMFD5877NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 6A 8SOIC |
|
APTM50HM75STGRoving Networks / Microchip Technology |
MOSFET 4N-CH 500V 46A SP4 |
|
ALD1107PBLAdvanced Linear Devices, Inc. |
MOSFET 4P-CH 10.6V 14DIP |
|
NTHD5903T1GRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
FDMS3602ASSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 15A/26A POWER56 |