English
简体中文
CAP CER 1210 33PF 10V ULTRA STAB
PFET, 5A I(D), 20V, 0.045OHM, 2-
MOSFET N-CH 25V 50A TO251-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A |
| rds on (max) @ id, vgs: | 45mOhm @ 5.7A, 4.5V |
| vgs(th) (最大值) @ id: | 1.2V @ 44µA |
| 栅极电荷 (qg) (max) @ vgs: | 16nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 1650pF @ 15V |
| 功率 - 最大值: | 1.6W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | PG-DSO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMHC6070LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N/2P-CHA 60V 3.1A 8SO |
|
RF1S50N06Rochester Electronics |
50A, 60V, 0.022 OHM, N-CHANNEL |
|
STS4DNF60LSTMicroelectronics |
MOSFET 2N-CH 60V 4A 8-SOIC |
|
APTM100A13SCGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1000V 65A SP6 |
|
2N7002VAC-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.28A SOT-563 |
|
ALD114804SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
|
STS4DPF20LSTMicroelectronics |
MOSFET 2P-CH 20V 4A 8SOIC |
|
FDS8978Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 7.5A 8SOIC |
|
QH8KA1TCRROHM Semiconductor |
30V NCH+NCH POWER MOSFET |
|
FDY4000CZSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V SOT563F |
|
FDS6994SRochester Electronics |
6.9A, 30V, 0.021OHM, 2-ELEMENT, |
|
SI1029X-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 60V SC89-6 |
|
SSM6N35AFE,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2 N-CHANNEL 20V 250MA ES6 |