类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 P-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 5A (Tc) |
rds on (max) @ id, vgs: | 75mOhm @ 3.9A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 15nC @ 10V |
输入电容 (ciss) (max) @ vds: | 480pF @ 25V |
功率 - 最大值: | 3.3W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB13N03LBGRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
SI4816BDY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 5.8A 8-SOIC |
|
SIZ710DT-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 16A POWERPAIR |
|
DMC3028LSDX-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 30V 5.5A/5.8A 8SO |
|
APTC80TDU15PGRoving Networks / Microchip Technology |
MOSFET 6N-CH 800V 28A SP6-P |
|
ALD1115SALAdvanced Linear Devices, Inc. |
MOSFET N/P-CH 10.6V 8SOIC |
|
PMV28UNEA,215Rochester Electronics |
2.9A, 20V, N CHANNEL, SILICON, M |
|
APTM10TAM19FPGRoving Networks / Microchip Technology |
MOSFET 6N-CH 100V 70A SP6-P |
|
NTGD4167CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 2.6/1.9A 6TSOP |
|
DMN63D0LT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V SOT523 |
|
MAX5078BATT+Rochester Electronics |
MAX5078 4A, 20NS, MOSFET DRIVER |
|
SIA911ADJ-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 4.5A SC70-6 |
|
SH8KA4TBROHM Semiconductor |
30V NCH+NCH MIDDLE POWER MOSFET |