CAP CER 1PF 630V C0G/NP0 1206
MOSFET 2N-CH 30V 16A POWERPAIR
类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Half Bridge) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 16A |
rds on (max) @ id, vgs: | 12mOhm @ 13.8A, 10V |
vgs(th) (最大值) @ id: | 2.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 21nC @ 10V |
输入电容 (ciss) (max) @ vds: | 790pF @ 15V |
功率 - 最大值: | 29W, 66W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-PowerWDFN |
供应商设备包: | 8-PowerPair® (6x5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CSD87384MTexas Instruments |
MOSFET 2N-CH 30V 30A 5PTAB |
|
DMP2004DMK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 0.55A SOT-26 |
|
UT6JC5TCRROHM Semiconductor |
-60V DUAL PCH+PCH, DFN2020, POWE |
|
RF1S9540Rochester Electronics |
P-CHANNEL POWER MOSFETS |
|
CSD86360Q5DTexas Instruments |
MOSFET 2N-CH 25V 50A 8SON |
|
NDS9936Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIZ926DT-T1-GE3Vishay / Siliconix |
MOSFET 2 N-CH 25V 8-POWERPAIR |
|
MCH6631-TL-ERochester Electronics |
N CHANNEL AND P CHANNEL SILICON |
|
SIZ720DT-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 16A POWERPAIR |
|
BSS138BKS,115Nexperia |
MOSFET 2N-CH 60V 0.32A 6TSSOP |
|
IPG20N04S408AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 8TDSON |
|
SI4564DY-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 40V 10A 8SOIC |
|
ALD114904APALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |