English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | EPAD® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) Matched Pair |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 10.6V |
| 电流 - 连续漏极 (id) @ 25°c: | 12mA, 3mA |
| rds on (max) @ id, vgs: | 500Ohm @ 5.4V |
| vgs(th) (最大值) @ id: | 1.42V @ 1µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 2.5pF @ 5V |
| 功率 - 最大值: | 500mW |
| 工作温度: | 0°C ~ 70°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CPH6339-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
NVMFD5489NLWFT3GRochester Electronics |
N-CHANNEL, MOSFET |
|
NVMFD5877NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 6A SO8FL |
|
FDMS9408Rochester Electronics |
N-CHANNEL MOSFET |
|
FDS8958Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
ALD114913SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
SI4276DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 8A 8SO |
|
TD9944TG-GRoving Networks / Microchip Technology |
MOSFET 2N-CH 240V 8SOIC |
|
UPA603T-T2-ARochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
BUK7K5R6-30E,115Nexperia |
MOSFET 2N-CH 30V 40A LFPAK56D |
|
AON2810Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 2A 6DFN |
|
QS6M4TRROHM Semiconductor |
MOSFET N/P-CH 30V/20V 1.5A TSMT6 |
|
BSO350N03Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
