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MOSFET 2N-CH 60V 0.3A SOT363
IC DRAM 2GBIT PARALLEL 96VFBGA
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| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 300mA |
| rds on (max) @ id, vgs: | 3Ohm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 0.6nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 20pF @ 25V |
| 功率 - 最大值: | 500mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-VSSOP, SC-88, SOT-363 |
| 供应商设备包: | PG-SOT363-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
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