类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N and P-Channel |
场效应管特征: | Standard |
漏源电压 (vdss): | 40V |
电流 - 连续漏极 (id) @ 25°c: | 6.7A (Tc), 7.2A (Tc) |
rds on (max) @ id, vgs: | 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 5.6nC @ 4.5V, 16nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 800pF @ 15V, 1600pF @ 15V |
功率 - 最大值: | 2.5W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PMV100ENEA,215Rochester Electronics |
3A, 30V, N CHANNEL, SILICON, MOS |
|
FDPC5030SGSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V PWRCLIP56 |
|
ZXMP6A16DN8QTAZetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 60V 2.9A 8-SOIC |
|
ZXMN3AMCTAZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 2.9A DFN |
|
SH8J65TB1ROHM Semiconductor |
MOSFET 2P-CH 30V 7A SOP8 |
|
BSC0921NDIATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 30V 17A/31A TISON8 |
|
PMDPB56XN,115Rochester Electronics |
NOW NEXPERIA PMDPB56XN - HUSON6 |
|
DMC4047LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 40V 7A/5.1A 8SOIC |
|
IRFW630BTM_FP001Rochester Electronics |
9A, 200V, 0.4OHM, N-CHANNEL |
|
ALD1103SBLAdvanced Linear Devices, Inc. |
MOSFET 2N/2P-CH 10.6V 14SOIC |
|
DMP58D0SV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 50V 0.16A SOT-563 |
|
SH8M12TB1ROHM Semiconductor |
MOSFET N/P-CH 30V 5A/4.5A SOP8 |
|
APTC60DSKM24T3GRoving Networks / Microchip Technology |
MOSFET 2N-CH 600V 95A SP3 |