English
简体中文
RES 20K OHM 0.1% 2/5W 1206
NOW NEXPERIA PMDPB30XN - SMALL S
T DISTRIBUTOR 5POS M12 A-CODED
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A |
| rds on (max) @ id, vgs: | 40mOhm @ 3A, 4.5V |
| vgs(th) (最大值) @ id: | 900mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 21.7nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 660pF @ 10V |
| 功率 - 最大值: | 490mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-UDFN Exposed Pad |
| 供应商设备包: | 6-HUSON-EP (2x2) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI6926ADQ-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 4.1A 8-TSSOP |
|
FDMS3622SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 17.5/34A PWR56 |
|
ALD110802PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16DIP |
|
PSMN5R0-100ES127Rochester Electronics |
120A, 100V, 0.005OHM, N CHANNE |
|
NTLJD3115PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 2.3A 6-WDFN |
|
NTHD4401PT3GRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
SMA5125Sanken Electric Co., Ltd. |
MOSFET 3N/3P-CH 60V 10A 12-SIP |
|
MSCC60AM23C4AGRoving Networks / Microchip Technology |
PM-MOSFET-COOLMOS-SBD-SP4 |
|
NTLUD3191PZTBGRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
ECH8672-TL-HRochester Electronics |
POWER, P-CHANNEL, MOSFET |
|
DMP3164LVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V TSOT26 |
|
FDS89161LZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 100V 2.7A 8SOIC |
|
EMH2418R-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 24V 9A EMH8 |