English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 场效应管特征: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STS1DNC45STMicroelectronics |
MOSFET 2N-CH 450V 0.4A 8SOIC |
|
DMG1016VQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V SOT563 |
|
NVMFD5852NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 15A SO8FL |
|
SSM6L36FE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET N/P-CH 20V 0.5A/0.33A ES6 |
|
ECH8653-S-TL-HRochester Electronics |
MOSFET 2N-CH 20V 7.5A ECH8 |
|
BSL306NH6327XTSA1Rochester Electronics |
BSL306 - 250V-600V SMALL SIGNAL |
|
MCH6663-TL-HRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
SSM6N7002KFU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 60V 0.3A |
|
AUIRFS4410ZTRL-INFRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
MSCM20XM16F4GRoving Networks / Microchip Technology |
PM-MOSFET-FREDFET-7-SP4 |
|
ECH8659-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 7A ECH8 |
|
DMN3401LDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V SOT363 |
|
NTMD6N02R2GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 3.92A 8SOIC |
