类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 20V |
电流 - 连续漏极 (id) @ 25°c: | 8.6A |
rds on (max) @ id, vgs: | 17.5mOhm @ 4A, 4.5V |
vgs(th) (最大值) @ id: | 1.5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 8nC @ 4V |
输入电容 (ciss) (max) @ vds: | 520pF @ 10V |
功率 - 最大值: | 700mW |
工作温度: | - |
安装类型: | Surface Mount |
包/箱: | 6-VFDFN Exposed Pad |
供应商设备包: | 6-HWSON |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SSM6N67NU,LFToshiba Electronic Devices and Storage Corporation |
SMALL LOW RON DUAL NCH MOSFETS I |
|
NVMFD5489NLT3GRochester Electronics |
N-CHANNEL, MOSFET |
|
PMV50ENEA,215Rochester Electronics |
3.9A, 30V, N CHANNEL, SILICON, M |
|
SSM6P15FE(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET 2P-CH 30V 0.1A ES6 |
|
EMH2417R-TL-HRochester Electronics |
POWER, N-CHANNEL, MOSFET |
|
ALD110902PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
PMV50EPEA,215Rochester Electronics |
4.2A, 30V, P CHANNEL, SILICON, M |
|
FW257-TL-E-ONRochester Electronics |
N-CHANNEL MOSFET |
|
FDC6312PSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 2.3A SSOT-6 |
|
CMLDM5757 TR PBFREECentral Semiconductor |
MOSFET 2P-CH 20V 430MA SOT563 |
|
BUK7K18-40EXNexperia |
MOSFET 2N-CH 40V 24.2A LFPAK |
|
NTMD6601NR2GRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
RFD10N05SMRochester Electronics |
10A, 50V, N-CHANNEL, |