English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N and P-Channel Complementary |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 8.2A (Ta), 8A (Ta) |
| rds on (max) @ id, vgs: | 25mOhm @ 6A, 10V, 28mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 6nC @ 4.5V, 10.9nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 641pF @ 15V, 1241pF @ 15V |
| 功率 - 最大值: | 1.6W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MCH6662-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 2A MCPH6 |
|
ECH8651R-TL-HRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
PMT280ENEA,115Rochester Electronics |
1.5A, 100V, N CHANNEL, SILICON, |
|
RJK03C0DPA-WS#J5ARochester Electronics |
N-CHANNEL POWER SWITCHING |
|
TC6321T-V/9URoving Networks / Microchip Technology |
MOSFET N/P-CH 200V 2A 8VDFN |
|
SSM6N16FUTE85LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 20V 0.1A US6 |
|
NVMFD5C668NLT1GSanyo Semiconductor/ON Semiconductor |
T6 60V S08FL DUAL |
|
BUK762R0-40CRochester Electronics |
PFET, 276A I(D), 40V, 0.00375OHM |
|
AOC2870Alpha and Omega Semiconductor, Inc. |
MOSFET 2 N-CHANNEL 4DFN |
|
DMG6898LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 9.5A 8SO |
|
SSM6P54TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET P-CHX2 VDSS- |
|
SI9936DYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FW216A-TL-2WRochester Electronics |
4.5A, 35V, 0.064OHM, 2-ELEMENT, |
