English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 场效应管特征: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI7288DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 20A PPAK SO-8 |
|
FS70UM-06#B00Rochester Electronics |
70A, 60V, N-CHANNEL MOSFET |
|
ALD1101SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
FDMS7600ASSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 12A/22A POWER56 |
|
BSS138DW-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 50V 0.2A SC70-6 |
|
DMC31D5UDJ-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 30V SOT963 |
|
IPA180N10N3GRochester Electronics |
28A, 100V, 0.018OHM, N-CHANNEL, |
|
ALD110814PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16DIP |
|
CSD88599Q5DCTexas Instruments |
MOSFET 2 N-CH 60V 22-VSON-CLIP |
|
BSO150N03Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
RF1S45N06LERochester Electronics |
45A, 60V, 0.028OHM, N-CHANNEL, |
|
SI1922EDH-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 1.3A SOT-363 |
|
SSM6N44FE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 0.1A ES6 |
