English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.3A |
| rds on (max) @ id, vgs: | 45mOhm @ 5A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 12nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 389pF @ 10V |
| 功率 - 最大值: | 730mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-UDFN Exposed Pad |
| 供应商设备包: | U-DFN2020-6 (Type B) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDS4897CSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 40V 6.2/4.4A 8SOIC |
|
SI3552DV-T1-E3Vishay / Siliconix |
MOSFET N/P-CH 30V 6TSOP |
|
SI5513CDC-T1-E3Vishay / Siliconix |
MOSFET N/P-CH 20V 4A 1206-8 |
|
SQJ202EP-T1_GE3Vishay / Siliconix |
MOSFET 2N-CH 12V 20A/60A PPAK SO |
|
DMN32D4SDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 0.65A SOT363 |
|
DMC6070LND-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 60V 8POWERDI |
|
SQ4284EY-T1_BE3Vishay / Siliconix |
MOSFET 2N-CH 40V 8A 8SOIC |
|
SSM6N16FE,L3FToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET N-CH X 2 VDS |
|
ALD212900APALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
|
AO6804AAlpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 20V 5A 6TSOP |
|
SI3590DV-T1-E3Vishay / Siliconix |
MOSFET N/P-CH 30V 2.5A 6TSOP |
|
SI1025X-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 60V 0.19A SC-89 |
|
DMC2450UV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V SOT563 |
