English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) Asymmetrical |
| 场效应管特征: | Logic Level Gate, 5V Drive |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A |
| rds on (max) @ id, vgs: | 14.3mOhm @ 4A, 8V |
| vgs(th) (最大值) @ id: | 1.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 4.6nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 662pF @ 15V |
| 功率 - 最大值: | 6W |
| 工作温度: | 125°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerTDFN |
| 供应商设备包: | 8-VSON (3.3x3.3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AO6601Alpha and Omega Semiconductor, Inc. |
MOSFET N/P-CH 30V 6-TSOP |
|
IRFR2209ARochester Electronics |
PFET, 4.6A I(D), 200V, 0.8OHM, 1 |
|
FDMS3615SRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
BUK9K17-60EXNexperia |
MOSFET 2N-CH 60V 26A 56LFPAK |
|
MTM684100LBFPanasonic |
MOSFET 2P-CH 12V 4.8A WMINI8 |
|
SQJ980AEP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 75V POWERPAK SO8 |
|
DMN2300UFL4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 2.11A 6DFN |
|
SI1965DH-T1-BE3Vishay / Siliconix |
MOSFET 2P-CH 12V 1.3A SC70-6 |
|
NTZD3156CT1GRochester Electronics |
SMALL SIGNAL N AND P-CH MOSFET |
|
DMC3028LSDXQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 30V 8SOIC |
|
TSM110NB04DCR RLGTSC (Taiwan Semiconductor) |
DUAL N-CHANNEL POWER MOSFET 40V, |
|
TC6215TG-GRoving Networks / Microchip Technology |
MOSFET N/P-CH 150V 8SOIC |
|
LN60A01ES-LF-ZMPS (Monolithic Power Systems) |
MOSFET 3N-CH 600V 0.08A 8SOIC |
