类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 P-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 60V |
电流 - 连续漏极 (id) @ 25°c: | 2.9A |
rds on (max) @ id, vgs: | 105mOhm @ 2.9A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 23nC @ 10V |
输入电容 (ciss) (max) @ vds: | 1020pF @ 30V |
功率 - 最大值: | 900mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSL214NL6327Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IRFIRL60B216Rochester Electronics |
HEXFET POWER MOSFET |
|
NX3008NBKV,115Nexperia |
MOSFET 2N-CH 30V 400MA SOT666 |
|
AO4627Alpha and Omega Semiconductor, Inc. |
MOSFET N/P-CH 30V 8SOIC |
|
FDZ2554PZRochester Electronics |
P-CHANNEL POWER MOSFET |
|
TQM300NB06DCR RLGTSC (Taiwan Semiconductor) |
60V, 25A, DUAL N-CHANNEL POWER M |
|
SSM6L16FETE85LFToshiba Electronic Devices and Storage Corporation |
MOSFET N/P-CH 20V 0.18A/0.1A ES6 |
|
CPH6635-TL-HRochester Electronics |
SMALL SIGNAL N AND P-CH MOSFET |
|
BSL806NL6327Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SQJQ900E-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 40V POWERPAK8X8 |
|
NTZD3154NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 540MA SOT563 |
|
2N7002VA-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.28A SOT-563 |
|
AO4892Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 100V 4A 8SOIC |