English
简体中文
RES 5.6K OHM 1/2W 1% AXIAL
MOSFET 2N-CH 55V 20A 8TDSON
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, OptiMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 55V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A |
| rds on (max) @ id, vgs: | 65mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 14µA |
| 栅极电荷 (qg) (max) @ vgs: | 12nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 410pF @ 25V |
| 功率 - 最大值: | 43W |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount, Wettable Flank |
| 包/箱: | 8-PowerVDFN |
| 供应商设备包: | PG-TDSON-8-10 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SH8M2TB1ROHM Semiconductor |
MOSFET N/P-CH 30V 3.5A SOP8 |
|
VT6K1T2CRROHM Semiconductor |
MOSFET 2N-CH 20V 0.1A VMT6 |
|
HP8S36TBROHM Semiconductor |
30V NCH+NCH MIDDLE POWER MOSFET, |
|
QS6K1TRROHM Semiconductor |
MOSFET 2N-CH 30V 1A TSMT6 |
|
DMP2108UCB6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 8V~24V U-WLB1510-6 |
|
FDMS7602SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 12A/17A POWER56 |
|
NDS8947Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
QH8K22TCRROHM Semiconductor |
QH8K22 IS LOW ON - RESISTANCE MO |
|
FDMA6023PZTSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 3.6A 6MICROFET |
|
PMV280ENEA,215Rochester Electronics |
1.1A, 100V, N CHANNEL, SILICON, |
|
APTM50AM38STGRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 90A SP4 |
|
SH8K52GZETBROHM Semiconductor |
100V NCH+NCH POWER MOSFET. SH8K5 |
|
IPG20N04S412AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 40V 20A 8TDSON |